IRF540N is Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRF540N is TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF540N Features:
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free The IRF540NPBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes. IRF540N性能參數(shù)：Attributes Table | Fet Type | N-Ch | | No of Channels | 1 | | Drain-to-Source Voltage [Vdss] | 100V | | Drain-Source On Resistance-Max | 44mΩ | | Rated Power Dissipation | 130W | | Qg Gate Charge | 71nC | | Gate-Source Voltage-Max [Vgss] | 20V | | Drain Current | 33A | | Turn-on Delay Time | 11ns |
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