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IRFR024N原裝現(xiàn)貨進(jìn)口IR 55V 17A TO252 MOS管.

Fifth Generation HEXFETs from InternationaI Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wel Iknown for,provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 wattsare possible in typicaI surface mount applications.

IRFR024N特征:

* Ultra Low On-Resistance
* Surface Mount (IRFR024N)
* Straight Lead (IRFU024N)
* Advanced Process Technology
* Fast Switching
* Fully Avalanche Rated