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FQP6N90C/FQPF6N90C是一款900V N-Channel MOSFET.
General Description
These N-Channel enhancement mode power field effect ransistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching erformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 6A, 900V, RDS(on) = 2.3? @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability