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PN7103SEC-R1是一款MOS/IGBT驅(qū)動(dòng)芯片,可替代IR2103S,昆山東森微電子代理銷售,并提供技術(shù)支持.

General Description
The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
 
Features
 * Fully operational to +600 V
 * 3.3 V logic compatible
 * dV/dt Immunity ±50 V/nsec
 * Floating channel designed for bootstrap operation
 * Gate drive supply range from 10 V to 20 V
 * UVLO for low side channel
 * Output Source / Sink Current Capability 300 mA /600mA
 * -5V negative Vs ability
 * Matched propagation delay for both channels
Applications
 * Small and medium- power motor driver
 * Power MOSFET or IGBT driver
 * Half-Bridge Power Converters
 * Full-Bridge Power Converters