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| NCE82H110 |
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| NCE82H110是NCE新潔能的一款MOS管|IGBT|模塊,我司不但為您提供可靠的全新原裝NCE82H110，還可提供NCE82H110應(yīng)用資料、免費樣品及產(chǎn)品研發(fā)技術(shù)支持！詳情可致電垂詢. | | 元件型號：NCE82H110 | | 元件品牌：NCE新潔能 |
| 全新原裝正品保障，質(zhì)量是企業(yè)的生命！ |
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Description
The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 82V,ID =110A
RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply |
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| 聯(lián)系方式 |
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總 機:0512-50710709
手 機:15950933050
微信:15950933050
業(yè)務(wù)QQ:41086900
技術(shù)QQ:1723916736
E-mail:[email protected] |
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