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SCD120S封裝:SOD-123

Marking:D12S

General Features:
Silicon Epitaxial Planar Diode
Highly Uniform VBR (±7%) guaranteed by Specification
Extremely Low VBR Temperature Coefficient
Highly Uniform Current Distribution
RoHS Compliant & Halogen Free

General Description:
This novel diode, manufactured by DS proprietary silicon process and structure, is featured with both highly uniform
breakdown voltage (VBR) and low temperature co-efficiency of VBR. It is suitable for the snubber circuit in various
AC/DC power conversions system. The device can effectively relax the electrical stress on system and therefore improve
reliability.

關(guān)鍵詞:SCD120S,D12S,TVS二極管,快恢復(fù)二極管