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| CJP75N80 |
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| CJP75N80是CJ長(zhǎng)電的一款MOS管|IGBT|模塊,我司不但為您提供可靠的全新原裝CJP75N80，還可提供CJP75N80應(yīng)用資料、免費(fèi)樣品及產(chǎn)品研發(fā)技術(shù)支持！詳情可致電垂詢. | | 元件型號(hào)：CJP75N80 | | 元件品牌：CJ長(zhǎng)電 |
| 全新原裝正品保障，質(zhì)量是企業(yè)的生命！ |
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TO-220 Plastic-Encapsulate Transistors
CJP75N80 N-Channel Power MOSFET
General Description
The CJ75N80 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
Advanced trench process technology
Special designed for convertors and power controls
High density cell design for ultra low RDS(on)
Fully characterized avalanche voltage and current
Fast switching
Avalanche energy 100% test
APPLICATIONS
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Equivalent Circuit
Maximum ratings (at TA=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source voltage VDSS 75
Gate-Source Voltage VGS ±258
V
Drain Current(DC) at TC=25℃ 80
Drain Current(DC) at TC=100℃
ID(DC)
78
Drain Current-Continuous @Current-Pulsed(note1) IDM(pulse) 320
A
Peak diode recovery voltage dv/dt 0.6 V/ns
Power Dissipation PD 2 W
Derating factor 1.13 W/℃
Single Pulsed Avalanche Energy(note2) EAS 580 mJ
Thermal Resistance, Junction-to-Ambient 63
Thermal Resistance, Junction-to-Case 0.88
℃/W
Operating Junction and storage Temperature Range Tj, Tstg -55 ~175 ℃
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: Tj=25℃ , VDD=50V,VG=10V,L=0.3mH,ID=62A |
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